2SC5335

Transistor 2SC5335(Tentative) Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.7 4.0 s Features q q 0.65 max. 1.0 1.0 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature *1 (Ta=25˚C) Ratings 60 50 15 1.5 0.7 1.0 150 –55 ~ +150 1cm2 Unit 0.45–0.05 0.45–0.05 +0.1 +0.1 Symbol VCBO VCEO VEBO ICP IC PC*1 Tj Tstg 2.5±0.5 1 2 2.5±0.5 3 V V A A W ˚C ˚C 1.2±0.1 0.65 max. 0.1 0.45+ – 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board 2.5±0.1 V (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT Cob *1 Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, I...