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2SC5339

Toshiba Semiconductor

NPN TRANSISTOR

2SC5339 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5339 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLU...


Toshiba Semiconductor

2SC5339

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2SC5339 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5339 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS Unit: mm l High Voltage : VCBO = 1500 V l Low Saturation Voltage : VCE (sat) = 5 V (Max.) l High Speed : tf = 0.2 µs (Typ.) l Bult−in Damper Type l Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1500 600 5 7 14 3.5 50 150 −55~150 EQUIVALENT CIRCUIT UNIT V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-16E3A Weight: 5.5 g (typ.) 1 2001-08-21 ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut−off Current Emitter Cut−off Current Emitter−Base Breakdown Voltage DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Forward Voltage (Damper Diode) Transition Frequency Collector Output Capacitance Switching Time Storage Time Fall Time ICBO IEBO V (BR) EBO hFE (1) hFE (2) VCE (sat) VBE (sat) VF fT Cob tstg tf VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IE = 400 mA, IC = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 5 A IC = 5 A, IB = 1.25 A IC = 5 A, IB = 1.25 A IF = 5 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 5 A, ...




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