Semiconductor
2SC5343EF
NPN Silicon Transistor
Description
• General small signal amplifier
Features
• Low collector ...
Semiconductor
2SC5343EF
NPN Silicon
Transistor
Description
General small signal amplifier
Features
Low collector saturation voltage : VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) Complementary pair with 2SA1980EF
Ordering Information
Type NO. 2SC5343EF Marking C : hFE rank Package Code SOT-523F
Outline Dimensions
unit : mm
1.5~1.7 0.78~0.98
1.5~1.7
0.9~1.1
1 3
0.25~0.30 0~0.1
2
0.63~0.78
PIN Connections 1. Base 2. Emitter 3. Collector
KST-4004-004
0.6~0.16
1
2SC5343EF
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
Ta=25°C
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
60 50 5 150 150 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistion frequency Collector output capacitance Noise figure
Ta=25°C
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE fT Cob NF
*
Test Condition
IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=100mA, IB=10mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, f=1KHz, Rg=10KΩ
Min. Typ. Max.
60 50 5 70 80 2 0.1 0.1 700 0.25 3.5 10
Unit
V V V µA µA V MHz pF dB
VCE(sat)
* : hFE rank / O : 70 ~ 140, Y ...