2SC5346

Transistor 2SC5346 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1982 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 0.7 4.0 s Features q q q Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature *1 (Ta=25˚C) Ratings 150 150 5 100 50 1.0 150 –55 ~ +150 1cm2 Unit V V V mA mA W ˚C ˚C 0.45–0.05 +0.1 +0.1 2.5±0.5 2.5±0.5 2 3 Symbol VCBO VCEO VEBO ICP IC PC*1 Tj Tstg 1 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board 1.2±0.1 0.65 max. 0.1 0.45+ – 0.05 (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Noise voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCEO VEBO hFE *1 Conditions VCB = 100V, IE = 0 IC = 0.1mA, IB = 0 IE = 10µA, I...