2SC5347

Ordering number : EN5512C 2SC5347 SANYO Semiconductors DATA SHEET 2SC5347 NPN Epitaxial Planar Silicon Transistor High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications Features High-frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz). :⏐S21e⏐2=8dB typ (f=1GHz). : NF=1.8dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Marking : CZ Symbol ICBO IEBO hFE fT Cob Cre ⏐S21e⏐2 NF Conditions Mounted on a ceramic board (900mm2✕0.8mm) Ratings 20 12 2 150 1.3 150 --55 to +150 Conditions VCB=10V, IE=0A VEB=1V, IC=0A VCE=5V, IC=50mA VCE=5V, IC=50mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=50mA, f=1GHz VCE=5V, IC=50mA, f=1GHz Ratings min typ 60* 3 4.7 1.3 0.9 68 1.8 max 1.0 10 270* 2.0 3.0 Unit V V V mA W °C °C Unit μA μA GHz pF pF dB dB * : The 2SC5347 is classified by 50mA hFE as follows : Rank D E hFE 60 to 120 90 to 180 F 135 to 270 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that ...