2SC535

2SC535 Silicon NPN Epitaxial Planar Application VHF amplifier, mixer, local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC535 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 20 100 150 –55 to +150 Unit V V V mA mW °C °C 2 2SC535 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 20 4 — 1 Typ — — — — — 0.72 0.17 940 0.9 20 3.5 Max — — — 0.5 200 — — — 1.2 — 5.5 Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 6 V, IC = 1 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Power gain Noise figure Input admittance (typ) Reverse transfer admittance (typ) Foward transfer admittance (typ) Output admittance (typ) Note: B 60 to 120 C 100 to 200 V(BR)EBO I CBO hFE* VBE VCE(sat) fT Cob PG NF yie yre yfe yoe 60 — — 450 — 17 — V V MHz pF dB dB mS mS mS mS VCE = 6 V, IC = 1 mA I C = 20 mA, IB =4 mA VCE = 6 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 1 mA, f = 100 MHz VCE = 6 V, IC = 1 mA, f = 100 MHz, Rg = 50 Ω VCE = ...