2SC5354

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5354 High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications 2SC5354 Unit: mm Excellent switching times: tr = 0.7 μs (max) tf = 0.5 μs (max) (IC = 2 A) High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 900 V 800 V 7 V 5 A 8 2 A 100 W 150 °C −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-16C1A Weight: 4.7 g (typ.) Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1998-11 1 2013-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off curr...