PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5369
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION
FEATURES
High f T 14 GHz TYP. High gain | S 21 e | 2 = 14 dB TYP. NF = 1.3 dB, @f = 2 GHz, VCE = 3 V, IC = 3 mA 6-pin small mini mold package @f = 2 GHz, V CE = 3 V, IC = 10 mA
PACKAGE DIMENSION (in mm)
2.1±0.1 1.25±0.1
0.2 –0
+0.1
1
0...
