Transistor
2SC5378
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
Unit: mm
s F...
Transistor
2SC5378
Silicon
NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
Unit: mm
s Features
q q q q
2.1±0.1 0.425 1.25±0.1 0.425
Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.2
0.9±0.1
(Ta=25˚C)
Ratings 15 8 2 80 150 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C
0 to 0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
0.7±0.1
s Absolute Maximum Ratings
0.2±0.1
1:Base 2:Emitter 3:Collector
EIAJ:SC–70 S–Mini Type Package
Marking symbol : HT
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector output capacitance Transition frequency Noise figure Foward transfer gain
(Ta=25˚C)
Symbol ICBO IEBO hFE fT NF | S21e |2
*1
Conditions VCB = 10V, IE = 0 VEB = 1V, IC = 0 VCE = 5V, IC = 10mA VCB = 5V, IE = 0, f = 1MHz VCE = 5V, IC = 10mA, f = 2GHz VCE = 5V, IC = 3mA, f = 1GHz VCE = 5V, IC = 10mA, f = 1GHz
min
typ
max 1 1
0.15–0.05
+0.1
0.3–0
+0.1
Unit µA µA
80 0.6 7 1.6 8.5 11
200 1 pF GHz 2 dB dB
Cob
*1h
FE
Rank classification
Q 80 ~ 115 R 95 ~ 155 S 135 ~ 200
Rank hFE
1
Transistor
PC — Ta
200 120 Ta=25˚C 10...