2SC5388

Ordering number:ENN6283 NPN Triple Diffused Planar Silicon Transistor 2SC5388 High-Voltage Switching Applications Features · High speed (Adoption of MBIT process). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5388] 3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 20.4 2.8 2.0 1.0 4.0 2.0 0.6 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25˚C 5.45 Conditions 3.5 5.45 2.0 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Ratings 1500 700 5 5 10 1 3.0 50 150 –55 to +150 Unit V V V A A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 VCB=700V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1A VCE=5V, IC=5A 100 50 Conditions Ratings min typ max 0.1 600 230 150 Unit mA mA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damag...