2SC5415

Ordering number:ENN5911 NPN Epitaxial Planar Silicon Transistor 2SC5415 High-Frequency Low-Noise Amplifier Applications Features · High gain : S21e =9dB typ (f=1GHz). · High cutoff frequency : fT=6.7GHz typ. 2 Package Dimensions unit:mm 2038A [2SC5415] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Mounted on a ceramic board (250mm2× 0.8mm) Conditions 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Ratings 20 12 2 100 800 150 –55 to +150 Unit V V V mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE1 hFE2 fT Cob Cre | S21e |2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=30mA VCE=5V, IC=70mA VCE=5V, IC=30mA VCB=5V, f=1MHz VCB=5V, f=1MHz VCE=5V, IC=30mA, f=1GHz VCE=5V, IC=7mA, f=1GHz 7.5 90* 70 5 6.7 1.2 0.65 9 1.1 2.0 1.8 GHz pF pF dB dB Conditions Ratings min typ max 1.0 10 270* Unit µA µA * The 2SC5415 is classified by 30mA hFE as follows : Marking : EA hFE rank : E, F 90 E 180 135 F 270 Any and all SANYO products described or contained herein do not have specifications that can han...