2SC5432

PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) Contains same chip as 2SC5006 PACKAGE DIMENSIONS (in mm) 1.4 ± 0.05 0.8 ± 0.1 1.4 ± 0.1 (0.9) 0.45 0.45 0.2 +0.1 –0 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 20 12 3 100 125 150 –65 to +150 UNIT V V TC 3 1 0.59 ± 0.05 V mA mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Reverse Transfer Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre |S21e| NF 2 PIN CONNECTIONS 1: Emitter 2: Base 3: Collector TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 7 mANote 1 MIN. TYP. MAX. 1000 1000 UNIT nA nA 80 3.0 4.5 0.7 7.0 10.0 1.4 145 GHz 1.5 pF dB 2.5 dB VCE = 3 V, IC = 7 mA, f = 1 GHz VCB = 3 V, IE = 0, f = 1 MHzNote 2 VCE = 3 V, IC = 7 mA, f = 1 GHz VCE = 3 V, IC = 7 mA, f = 1 GHz Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 % 2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin. Because this product uses hig...