PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5434
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIF...
PRELIMINARY DATA SHEET
SILICON
TRANSISTOR
2SC5434
NPN EPITAXIAL SILICON
TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FEATURE
Ultra super mini-mold thin flat package (1.4 mm × 1.8 mm × 0.59 mm: TYP.) Contains same chip as 2SC5008
PACKAGE DIMENSIONS (in mm)
1.4 ± 0.05 0.8 ± 0.1
1.4 ± 0.1 (0.9) 0.45 0.45
0.2 +0.1 –0
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 20 10 1.5 35 125 150 –65 to +150 UNIT V V
TH
3
1
mW °C °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Reverse Transfer Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre |S21e|2 NF TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 5 mANote 1 VCE = 3 V, IC = 5 mA, f = 2 GHz VCB = 3 V, IE = 0, f = 1 MHzNote 2 VCE = 3 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 5 mA, f = 2 GHz
PIN CONNECTIONS 1: Emitter 2: Base 3: Collector
MIN.
TYP.
MAX. 1000 1000
UNIT nA nA
80 5.5 80 0.3 5.5 7.5 1.9
145 GHz 0.7 pF dB 3.2 dB
Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 % 2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
Because this product uses high-frequency process, a...