2SC5436

PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) Contains same chip as 2SC5186 PACKAGE DIMENSIONS (in mm) 1.4 ± 0.05 0.8 ± 0.1 1.4 ± 0.1 (0.9) 0.45 0.45 0.2 +0.1 –0 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 5 3 2 30 90 150 –65 to +150 UNIT V V TN 3 1 mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance Gain Bandwidth Product (1) Gain Bandwidth Product (2) Insertion Power Gain (1) Insertion Power Gain (2) Noise Figure (1) Noise Figure (2) SYMBOL ICBO IEBO hFE Cre fT (1) fT (2) |S21e|2 (1) |S21e|2 (2) NF (1) NF (2) TEST CONDITIONS VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 2 V, IC = 20 mANote 1 VCB = 2 V, IE = 0, f = 1 MHzNote 2 VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz VCE = 2 V, IC = 3 mA, f = 2 GHz VCE = 1 V, IC = 3 mA, f = 2 GHz PIN CONNECTIONS 1: Emitter 2: Base 3: Collector MIN. TYP. MAX. 100 100 UNIT nA nA 70 0.4 9.0 7.0 8.5 6.0 14.0 12.0 10.0 9.0 1.4 1.4 130 0.8 pF GHz GHz dB ...