TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5439
Switching Regulator Applications High-Voltage Switching Appl...
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type
2SC5439
Switching
Regulator Applications High-Voltage Switching Applications DC-DC Converter Applications Inverter Lighting Applications
2SC5439
Unit: mm
Excellent switching times: tr = 0.2 μs (typ.), tf = 0.15 μs (typ.) High collector breakdown voltage: VCEO = 450 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
1000 450
9 8 16 1 2.0 30 150 −55 to 150
V V V
A
A
W
°C °C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1 2009-12-21
Electrical Characteristics (Ta = 25°C)
2SC5439
Characteristics Collector cut-off current Emitter cut-off ...