Document
2SC5449
Silicon NPN Triple Diffused Character Display Horizntal Deflection Output
ADE-208-578 B (Z) 3rd. Edition September 1997 Features
• High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec (typ.) at fH = 64 kHz • Isolated package TO–3PFM
Outline
TO–3PFM
1
2 3
1. Base 2. Collector 3. Emitter
2SC5449
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCBO VCEO VEBO IC ic(peak) PC Tj Tstg
Note1
Ratings 1500 700 6 12 24 50 150 –55 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to emitter breakdown voltage Emitter to base breakdownvoltage Collector cutoff current DC current transfer ratio DC current transfer ratio Collector to emitter saturationvoltage Base to emitter saturationvoltage Fall time Fall time Symbol V(BR)CEO V(BR)EBO ICES hFE1 hFE2 VCE(sat) VBE(sat) tf tf Min 700 6 — 10 3.5 — — — — Typ — — — — — — — 0.2 0.15 Max — — 500 30 6.5 5 1.5 0.4 — V V µs µs Unit V V µA Test Conditions IC = 10mA, RBE = ∞ IE = 10mA, IC = 0 VCE = 1500V, RBE = 0 VCE = 5 V, IC = 1A VCE = 5 V, IC = 7A IC = 7A, IB = 1.8A IC = 7A, IB = 1.8A ICP = 6A, IB1 = 2A fH = 31.5kHz ICP = 6A, IB1 = 1.5A fH = 64kHz
2
2SC5449
Main Characteristics
Collector Power Dissipation vs. Temperature 80 Collector Power Dissipation Pc (W) 50 20 60 Collector Current I C(A) 10 5 2 1 0.5 0.2 0 50 100 Case Temperature 150 Tc (°C) 200
Area of Safe Operaion
40
20
0.1 100 5000 1000 10 Collector to Emitter Voltage V CE(V)
L = 180 µH I B2 = –1 A duty < 1 % Tc = 25°C
Typical Output Characteristics 10
FE
2.0 A 1.8 A 1.6 A 1.4 A 1.2 A 1.0 A 0.8 A 0.6 A
DC Current Transfer Ratio vs. Collector Current 100
I C(A)
50
DC Current Transfer Ratio
W
h
Pc
50 20 10 5 2 1 0.1
75 °C
=
Collector Current
5
25 °C Tc = –25 °C
0.4 A
0.2 A
Tc = 25 °C 0 5
IB= 0
VCE = 5 V 2 5 0.2 0.5 1 Collector Current I C(A) 10 20
10
Collector to Emitter Voltage V CE (V)
3
2SC5449
Collector to Emitter Saturation Voltage vs. Collector Current
Collector to Emitter Saturation Voltage V CE(sat) (V)
Base to Emitter Saturation Voltage vs. Collector Current 10
Base to Emitter Saturation Voltage V BE(sat) (V)
10 IC / I B= 4 5 2 1 75 °C 25 °C
I C/ I B= 4 5 2 Tc = –25°C 1 0.5 0.2 25 °C 75 °C
0.5 0.2 Tc = –25 °C 2 5 10 0.5 1 Collector Current I C (A) 20
0.1
0.05 0.1 0.2
0.1
2 5 10 0.2 0.5 1 Collector Current I C (A)
20
Collector to Emitter Saturation Voltage vs. Base Current
Collector to Emitter Saturation Voltage V CE(sat) (V)
Fall Time vs. Base Current 0.8 I CP = 6 A f H = 64 kHz Tc = 25°C
10
Fall Time t f (µs)
I C= 4 A 6A 8A 5
0.6
0.4
0.2
Tc = 25°C 0 0.1 0.2 0.5 1 Base Current
2 I B (A)
5
10
0 0.4
0.8
1.2
1.6
2.0
2.4
2.6
Base Current I B1 (A)
4
2SC5449
Storage Time vs. Base Current 8 I CP = 6 A f H = 64 kHz T.