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2SC5449 Dataheets PDF



Part Number 2SC5449
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5449 Datasheet2SC5449 Datasheet (PDF)

2SC5449 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output ADE-208-578 B (Z) 3rd. Edition September 1997 Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec (typ.) at fH = 64 kHz • Isolated package TO–3PFM Outline TO–3PFM 1 2 3 1. Base 2. Collector 3. Emitter 2SC5449 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collec.

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2SC5449 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output ADE-208-578 B (Z) 3rd. Edition September 1997 Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec (typ.) at fH = 64 kHz • Isolated package TO–3PFM Outline TO–3PFM 1 2 3 1. Base 2. Collector 3. Emitter 2SC5449 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCBO VCEO VEBO IC ic(peak) PC Tj Tstg Note1 Ratings 1500 700 6 12 24 50 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Emitter to base breakdownvoltage Collector cutoff current DC current transfer ratio DC current transfer ratio Collector to emitter saturationvoltage Base to emitter saturationvoltage Fall time Fall time Symbol V(BR)CEO V(BR)EBO ICES hFE1 hFE2 VCE(sat) VBE(sat) tf tf Min 700 6 — 10 3.5 — — — — Typ — — — — — — — 0.2 0.15 Max — — 500 30 6.5 5 1.5 0.4 — V V µs µs Unit V V µA Test Conditions IC = 10mA, RBE = ∞ IE = 10mA, IC = 0 VCE = 1500V, RBE = 0 VCE = 5 V, IC = 1A VCE = 5 V, IC = 7A IC = 7A, IB = 1.8A IC = 7A, IB = 1.8A ICP = 6A, IB1 = 2A fH = 31.5kHz ICP = 6A, IB1 = 1.5A fH = 64kHz 2 2SC5449 Main Characteristics Collector Power Dissipation vs. Temperature 80 Collector Power Dissipation Pc (W) 50 20 60 Collector Current I C(A) 10 5 2 1 0.5 0.2 0 50 100 Case Temperature 150 Tc (°C) 200 Area of Safe Operaion 40 20 0.1 100 5000 1000 10 Collector to Emitter Voltage V CE(V) L = 180 µH I B2 = –1 A duty < 1 % Tc = 25°C Typical Output Characteristics 10 FE 2.0 A 1.8 A 1.6 A 1.4 A 1.2 A 1.0 A 0.8 A 0.6 A DC Current Transfer Ratio vs. Collector Current 100 I C(A) 50 DC Current Transfer Ratio W h Pc 50 20 10 5 2 1 0.1 75 °C = Collector Current 5 25 °C Tc = –25 °C 0.4 A 0.2 A Tc = 25 °C 0 5 IB= 0 VCE = 5 V 2 5 0.2 0.5 1 Collector Current I C(A) 10 20 10 Collector to Emitter Voltage V CE (V) 3 2SC5449 Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage V CE(sat) (V) Base to Emitter Saturation Voltage vs. Collector Current 10 Base to Emitter Saturation Voltage V BE(sat) (V) 10 IC / I B= 4 5 2 1 75 °C 25 °C I C/ I B= 4 5 2 Tc = –25°C 1 0.5 0.2 25 °C 75 °C 0.5 0.2 Tc = –25 °C 2 5 10 0.5 1 Collector Current I C (A) 20 0.1 0.05 0.1 0.2 0.1 2 5 10 0.2 0.5 1 Collector Current I C (A) 20 Collector to Emitter Saturation Voltage vs. Base Current Collector to Emitter Saturation Voltage V CE(sat) (V) Fall Time vs. Base Current 0.8 I CP = 6 A f H = 64 kHz Tc = 25°C 10 Fall Time t f (µs) I C= 4 A 6A 8A 5 0.6 0.4 0.2 Tc = 25°C 0 0.1 0.2 0.5 1 Base Current 2 I B (A) 5 10 0 0.4 0.8 1.2 1.6 2.0 2.4 2.6 Base Current I B1 (A) 4 2SC5449 Storage Time vs. Base Current 8 I CP = 6 A f H = 64 kHz T.


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