2SC5464FT

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464FT 2SC5464FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 12 3 60 30 100 125 −55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT S21e2 (1) S21e2 (2) NF (1) NF (2) VCE = 8 V, IC = 15 mA VCE = 8 V, IC = 15 mA, f = 500 MHz VCE = 8 V, IC = 15 mA, f = 1 GHz VCE = 8 V, IC = 5 mA, f = 500 MHz VCE = 8 V, IC = 5 mA, f = 1 GHz Min Typ. Max Unit 5 7  GHz  17.5  8 12  dB 1 dB  1.1 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO VCB = 10 V, IE = 0 IEBO VEB = 1 V, IC = 0 hFE (Note 1) VCE = 8 V, IC = 15 mA Cob VCB = 8 V, IE = 0, f = 1 MHz Cre (Note 2)   80   1 1  240 0.75  0.5  µA µA pF pF Note 1: hFE classification O: 80~160, Y: 120~240 Note 2: Cre is measured by 3 terminal method with capacit...