2SC5502

Ordering number:ENN6279 NPN Epitaxial Planar Silicon Transistor 2SC5502 High-Frequency Low-Noise Amplifier Applications Features · Low noise : NF=1.1dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=8GHz typ. Package Dimensions unit:mm 2161 [2SC5502] 0.65 0.65 0.3 4 3 0.425 1 2 0.6 0.65 0.5 2.0 0.425 1.25 2.1 0 to 0.1 0.2 0.15 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Mounted on a ceramic board (250mm2× 0.8mm) Conditions 1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : MCP4 0.7 0.9 Ratings 20 12 2 100 500 150 –55 to +150 Unit V V V mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cre VCB=5V, IE=0 VEB=1V, IC=0 VCE=5V, IC=30mA VCE=5V, IC=70mA VCE=5V, IC=30mA VCB=5V, f=1MHz 90* 80 6 8 0.6 1.0 GHz pF Conditions Ratings min typ max 1.0 10 270* Unit µA µA * : The 2SC5502 is classified by 30mA hFE as follows : Marking Rank hFE 4 90 to 180 TY 5 135 to 270 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-...