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2SC5506 Dataheets PDF



Part Number 2SC5506
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN TRANSISTOR
Datasheet 2SC5506 Datasheet2SC5506 Datasheet (PDF)

Ordering number:EN6070 NPN Triple Diffused Planar Silicon Transistor 2SC5506 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5506] 20.0 3.3 5.0 26.0 2.0 3.4 2.0 1.0 20.7 0.6 1.2 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Vo.

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Ordering number:EN6070 NPN Triple Diffused Planar Silicon Transistor 2SC5506 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5506] 20.0 3.3 5.0 26.0 2.0 3.4 2.0 1.0 20.7 0.6 1.2 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚C 5.45 5.45 Conditions 2.8 1 2 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL Ratings 1600 800 6 20 40 3.5 180 150 –55 to +150 Unit V V V A A W W ˚C ˚C Tj Tstg Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain Symbol ICES VCE=1600V, RBE=0 VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 ICBO VCB=800V, IE=0 hFE1 hFE2 VCE=5V, IC=1A VCE=5V, IC=14A Conditions Ratings min 800 1.0 10 15 4 30 7 typ max 1.0 Unit mA V mA µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51099TS (KOTO) TA-1520 No.6070–1/4 2SC5506 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Storage Time Fall Time Symbol VCE(sat) VBE(sat) tstg tf IC=14A, IB=3.5A IC=14A, IB=3.5A IC=12A, IB1=2.0A, IB2=–5.0A IC=12A, IB1=2.0A, IB2=–5.0A Conditions Ratings min typ max 5 1.5 3.0 0.2 Unit V V µs µs Switching Time Test Circuit PW=20µs DC≤1% INPUT RB VR 50Ω RL=16.7Ω IB1 IB2 OUTPUT + 100µF + 470µF VBE=–2V VCC=200V 20 18 I C - VCE 5.0A 0A 2.5A .0A 3.5A 3. 4.5A 4 Collector Current, IC – A 20 18 16 14 12 I C - VBE VCE =5V Collector Current, IC – A 16 14 12 10 8 6 4 2 0 0 2.0A 1.5A 6 4 2 IB= 0 1 2 3 4 5 6 7 8 9 10 0 0 0.2 0.4 0.6 Ta= 0.5A 8 120 °C 25° C –40° C 0.8 1.0 1.0A 10 1.2 Collector-to-Emitter Voltage, VCE – V 100 7 5 Base-to-Emitter Voltage, VBE – V 10 7 5 hFE - I C VCE =5V Collector-to-Emitter Saturation Voltage, VCE(sat) – V VCE(sat) - I C IC / IB=5 Ta=120°C 25°C –40°C DC Current Gain, hFE 3 2 3 2 1.0 7 5 3 2 0.1 7 5 3 2 10 7 5 3 2 Ta=–40°C 25°C 120°C 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC – A Collector Current, IC – A No.6070–2/4 2SC5506 SW Time - I C 7 5 10 7 5 3 2 SW Time - I B2 ts tg t stg Switching Time, SW Time – µs Switching Time, SW Time – µs 3 2 1.0 7 5 3 2 1.0 tf 7 5 3 2 tf 0.1 VCC =200V IC / IB1=6 IB2/ IB1=2.5 R load 2 3 5 7 1.0 2 3 5 7 10 2 3 0.1 7 7 VCC =200V IC / IB1=6 IB2/ IB1=2.5 R load 0.1 2 3 5 7 1.0 2 3 5 7 10 2 7 7 0.1 Collector Current, IC – A 7 5 3 2 Base Current, IB2 – A 7 5 Forward Bias A S O I CP IC P C= 18 0W Reverse Bias A S O 10 0µ s 3 Collector Current, IC – A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 Collector Current, IC – A 7 1000 2 10 7 5 3 2 1.0 7 5 3 30 0µ s 1m s D C op er at io n 10 m s 3 Single pulse 2 2 3 5 7 10 Ta=25°C 2 2 3 5 7 100 2 3 5 0.1 5 L=100µH IB2 =-5A Tc=25°C Single pulse 7 100 2 3 5 7 1000 2 3 Collector-to-Emitter Voltage, VCE – V 5.0 Collector-to-Emitter Voltage, VCE – V 200 180 P C - Ta P C - Tc Collecter Dissipation, PC – W 4.0 3.5 3.0 Collecter Dissipation, PC – W 100 120 140 160 160 120 2.0 No he at sin k 80 1.0 40 0 0 20 40 60 80 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – °C Case Temperature, Tc – °C No.6070–3/4 2SC5506 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test d.


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