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2SC5515 Dataheets PDF



Part Number 2SC5515
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5515 Datasheet2SC5515 Datasheet (PDF)

Power Transistors 2SC5515 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1500 600 5 27 17 8 65 3 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter C.

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Power Transistors 2SC5515 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1500 600 5 27 17 8 65 3 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 4.0 2.0±0.2 1.1±0.1 2.0 0.7±0.1 5.45±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5.5±0.3 5° 1 2 3 2.0 1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time (TC=25˚C) Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT tstg tf Conditions VCB = 1000V, IE = 0 VCB = 1500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 8.5A IC = 8.5A, IB = 2.13A IC = 8.5A, IB = 2.13A VCE = 10V, IC = 0.1A, f = 0.5MHz IC = 8.5A, IB1 = 2.13A, IB2 = –4.25A 3 2.7 0.2 5 min typ max 50 1 50 10 3 1.5 V V MHz µs µs Unit µA mA µA 1 Power Transistors PC — Ta 100 2SC5515 Area of safe operation, horizontal operation ASO 35 f=64kHz, TC<90˚C Area of safe operation with respect to the single pulse overload curve at the time of switching ON, shutting down by the high voltage spark, holding down and like that, during horizontal operation. Collector power dissipation PC (W) 90 80 70 60 50 40 30 20 10 0 0 20 40 (2) (3) (1) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink 30 Collector current IC (A) 25 20 15 10 5 <1mA 0 500 1000 1500 2000 0 60 80 100 120 140 160 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) 2 .


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