2SC5518

Power Transistors 2SC5518 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1500 5 14 7 3.5 40 3 150 –55 to +150 Unit V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VEBO ICP IC IB PC Tj Tstg 4.0 2.0±0.2 1.1±0.1 2.0 0.7±0.1 5.45±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5.5±0.3 5° 1 2 3 2.0 1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time Diode forward voltage (TC=25˚C) Symbol ICBO VEBO hFE VCE(sat) VBE(sat) fT tstg tf VF Conditions VCB = 1000V, IE = 0 VCB = 1500V, IE = 0 IE = 500mA, IC = 0 VCE = 5V, IC = 5A IC = 5A, IB = 1A IC = 5A, IB = 1A VCE = 10V, IC = 0.1A, f = 0.5MHz IC = 5A, IB1 = 1A, IB2 = –2A IF = 5A 3 5.0 0.5 –2 5 5 10 3 1.5 V V MHz µs µs V min typ max 50 1 Unit µA mA V 1 ...