2SC5534

Ordering number:ENN6258 NPN Epitaxial Planar Silicon Transistor 2SC5534 UHF to S Band Low-Noise Amplifier, OSC Applications Features · Low noise : NF=1.2dB typ (f=2GHz). · High gain : S21e2=10dB typ (f=2GHz). · High cutoff frequency : fT=13GHz typ. Package Dimensions unit:mm 2161 [2SC5534] 0.65 0.65 0.3 4 3 0.425 1 2 0.6 0.65 0.5 2.0 0.425 1.25 2.1 0 to 0.1 0.2 0.15 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : MCP4 0.7 0.9 Ratings 9 6 1.5 30 150 150 –55 to +150 Unit V V V mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT Cre | S21e |2 1 | S21e |2 2 NF VCB=5V, IE=0 VEB=1V, IC=0 VCE=5V, IC=10mA VCE=5V, IC=10mA VCB=5V, f=1MHz VCE=5V, IC=10mA, f=2GHz VCE=1V, IC=3mA, f=2GHz VCE=5V, IC=5mA, f=2GHz 90 10 8 13 0.3 10 8 1.2 2.0 0.6 Conditions Ratings min typ max 1.0 10 200 GHz pF dB dB dB Unit µA µA Marking : RY Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, air...