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2SC5545

Hitachi Semiconductor

NPN TRANSISTOR

2SC5545 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-746 (Z) 1st. Edition Jan. 1999 Features • Excellent...


Hitachi Semiconductor

2SC5545

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2SC5545 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-746 (Z) 1st. Edition Jan. 1999 Features Excellent inter modulation characteristic High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter Note: Marking is “ZS-”. 2SC5545 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 6 1.5 50 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO I CBO I CEO I EBO hFE Cob fT PG NF Min 15 — — — 80 — 10 14 — Typ — — — — 120 0.69 12.6 16 1.1 Max — 1 1 10 160 1.1 — — 2.0 Unit V µA mA µA V pF GHz dB dB Test Conditions I C = 10µA , IE = 0 VCB = 12V , IE = 0 VCE = 6V , RBE = Åá VEB = 1.5V , IC = 0 VCE = 3V , IC = 20mA VCB = 3V , IE = 0 f = 1MHz VCE = 3V , IC = 20mA VCE = 3V, IC = 20mA f = 900MHz VCE = 3V, IC = 5mA f = 900MHz 2 2SC5545 Main Characteristics Maximum Collector Dissipation Curve 200 Pc (mW) hFE 200 DC Current Transfer Ratio vs. Collector Current VCE = 3 V Collector Power Dissipation DC Current Transfer Ratio 5...




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