Document
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5548
High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
2SC5548
Unit: mm
• High speed switching: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.8 A) • High collector breakdown voltage: VCEO = 370 V • High DC current gain: hFE = 60 (min) (IC = 0.2 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
600 370
7 2 4 0.5 1.0 15 150 −55 to 150
V V V
A
A
W
°C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1 2006-11-10
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage Base-emitter saturation voltage
Symbol
Test Condition
ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat)
VCB = 480 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.2 A IC = 0.8 A, IB = 0.1 A IC = 0.8 A, IB = 0.1 A
2SC5548
Min Typ. Max Unit
― ― 20 μA
― ― 10 μA
600 ―
―
V
370 ―
―
V
50 ― 120
60 ― 120
― ― 1.0 V
― ― 1.3 V
Rise time
Switching time
Storage time
Fall time
tr 20 μs VCC ≈ 200 V
― ― 0.5
IB1 250 Ω
IB1 IC
tstg
IB2 IB21
OUTPUT
―
― 3.0 μs
INPUT
tf IB1 = 0.1 A, IB2 = −0.2 A DUTY CYCLE ≤ 1%
― ― 0.3
Marking
C5548
Part No. (or abbreviation code)
Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2 2006-11-10
Collector current IC (A)
IC – VCE
2.0 200 150
1.6 100
80 1.2 60
40
0.8 20
IB = 10 mA 0.4
Common emitter Tc = 25°C 0 0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE (sat) – IC
10 Common emitter
IC/IB = 8 3
1 Tc = 100°C 0.3 25
−55 0.1
0.03 0.01
0.03 0.1 0.3 1 3
Collector current IC (A)
10
Base-emitter saturation voltage VBE (sat) (V)
DC current gain hFE
2SC5548
hFE – IC
1000
300
100 Tc = 100°C
25 30
−55 10
3 Common emitter VCE = 5 V
1 0.001 0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
3
VBE (sat) – IC
10 Common emitter IC/IB = 8
3
25 −55 1
Tc = 100°C 0.3
0.1 0.01
0.03 0.1 0.3
1
Collector current IC (A)
3
Collector-emitter saturation voltage VCE (sat) (V)
Collector current IC (A)
IC – VBE
2.0 Common emitter
VCE = 5 V 1.6
1.2
0.8
0.4
Tc = 100°C
25 −55
0 0 0.4 0.8 1.2
Base-emitter voltage VBE (V)
1.6
Collector power dissipation PC (W)
20 16 (1) 12
PC – Ta
(1) Tc = Ta infinite heat sink
(2) No heat sink
8
4 (2)
0 0 25 50 75 100 125 150 175 200
Ambient temperature Ta (°C)
3 2006-11-10
Transient thermal resistance rth (°C/W)
2SC5548
300
100 50 30
10 5 3
1 0.5 0.001
0.01
rth – tw
(2)
(1)
Curves should be applied in thermal limited area. (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 0.1 1 10 100 1000
Pulse width tw (s)
Safe Operating Area
10
5 IC max (pulsed)*
100 μs*
3 IC max (continuous)
10 μs*
1 ms* 1
0.5 DC operation 0.3 Tc = 25°C
10 ms*
0.1 100 ms*
0.05 0.03
0.01
0.005 *: Single nonrepetitive pulse
0.003
Tc = 25°C Curves must be
derated
linearly with increase in
temperature. 0.001
13
10
30
VCEO max 100 300
Collector-emitter voltage VCE (V)
1000
Switching time (μs)
Switching Characteristics – IC
5
IC = 8IB1
3
2IB1 = −IB2
tstg
VCC ≈ 200 V Pulse width = 20μs
Duty cycle
≤ 1%
Tc = 25°C
1
0.5 0.3
0.1 0.1
tf
0.3 0.5
1
3
Collector current IC (A)
5
10
Collector current IC (A)
4 2006-11-10
2SC5548
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss o.