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2SC5548 Dataheets PDF



Part Number 2SC5548
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5548 Datasheet2SC5548 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications 2SC5548 Unit: mm • High speed switching: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.8 A) • High collector breakdown voltage: VCEO = 370 V • High DC current gain: hFE = 60 (min) (IC = 0.2 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltag.

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications 2SC5548 Unit: mm • High speed switching: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.8 A) • High collector breakdown voltage: VCEO = 370 V • High DC current gain: hFE = 60 (min) (IC = 0.2 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 600 370 7 2 4 0.5 1.0 15 150 −55 to 150 V V V A A W °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2006-11-10 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) VCB = 480 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.2 A IC = 0.8 A, IB = 0.1 A IC = 0.8 A, IB = 0.1 A 2SC5548 Min Typ. Max Unit ― ― 20 μA ― ― 10 μA 600 ― ― V 370 ― ― V 50 ― 120 60 ― 120 ― ― 1.0 V ― ― 1.3 V Rise time Switching time Storage time Fall time tr 20 μs VCC ≈ 200 V ― ― 0.5 IB1 250 Ω IB1 IC tstg IB2 IB21 OUTPUT ― ― 3.0 μs INPUT tf IB1 = 0.1 A, IB2 = −0.2 A DUTY CYCLE ≤ 1% ― ― 0.3 Marking C5548 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-10 Collector current IC (A) IC – VCE 2.0 200 150 1.6 100 80 1.2 60 40 0.8 20 IB = 10 mA 0.4 Common emitter Tc = 25°C 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) VCE (sat) – IC 10 Common emitter IC/IB = 8 3 1 Tc = 100°C 0.3 25 −55 0.1 0.03 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10 Base-emitter saturation voltage VBE (sat) (V) DC current gain hFE 2SC5548 hFE – IC 1000 300 100 Tc = 100°C 25 30 −55 10 3 Common emitter VCE = 5 V 1 0.001 0.003 0.01 0.03 0.1 0.3 Collector current IC (A) 1 3 VBE (sat) – IC 10 Common emitter IC/IB = 8 3 25 −55 1 Tc = 100°C 0.3 0.1 0.01 0.03 0.1 0.3 1 Collector current IC (A) 3 Collector-emitter saturation voltage VCE (sat) (V) Collector current IC (A) IC – VBE 2.0 Common emitter VCE = 5 V 1.6 1.2 0.8 0.4 Tc = 100°C 25 −55 0 0 0.4 0.8 1.2 Base-emitter voltage VBE (V) 1.6 Collector power dissipation PC (W) 20 16 (1) 12 PC – Ta (1) Tc = Ta infinite heat sink (2) No heat sink 8 4 (2) 0 0 25 50 75 100 125 150 175 200 Ambient temperature Ta (°C) 3 2006-11-10 Transient thermal resistance rth (°C/W) 2SC5548 300 100 50 30 10 5 3 1 0.5 0.001 0.01 rth – tw (2) (1) Curves should be applied in thermal limited area. (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 0.1 1 10 100 1000 Pulse width tw (s) Safe Operating Area 10 5 IC max (pulsed)* 100 μs* 3 IC max (continuous) 10 μs* 1 ms* 1 0.5 DC operation 0.3 Tc = 25°C 10 ms* 0.1 100 ms* 0.05 0.03 0.01 0.005 *: Single nonrepetitive pulse 0.003 Tc = 25°C Curves must be derated linearly with increase in temperature. 0.001 13 10 30 VCEO max 100 300 Collector-emitter voltage VCE (V) 1000 Switching time (μs) Switching Characteristics – IC 5 IC = 8IB1 3 2IB1 = −IB2 tstg VCC ≈ 200 V Pulse width = 20μs Duty cycle ≤ 1% Tc = 25°C 1 0.5 0.3 0.1 0.1 tf 0.3 0.5 1 3 Collector current IC (A) 5 10 Collector current IC (A) 4 2006-11-10 2SC5548 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss o.


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