Document
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5548A
High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
2SC5548A
Unit: mm
• High speed switching: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.8 A) • High collector breakdown voltage: VCEO = 400 V • High DC current gain: hFE = 40 (min) (IC = 0.2 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
600
V
400
V
7
V
2 A
4
0.5
A
1.0 W
15
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Start of commercial production
1999-04
1
2013-11-01
Electrical Characteristics (Ta = 25°C)
2SC5548A
Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage Base-emitter saturation voltage
Symbol
Test Condition
ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat)
VCB = 480 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.2 A IC = 0.8 A, IB = 0.1 A IC = 0.8 A, IB = 0.1 A
Min Typ. Max Unit
―
―
20
μA
―
―
10
μA
600 ―
―
V
400 ―
―
V
20
―
―
40
―
100
―
―
1.0
V
―
―
1.3
V
Rise time
Switching time
Storage time
tr
20 μs VCC ≈ 200 V
―
―
0.5
IB1 250 Ω
IC IB1
tstg
IB2
OUT-
―
―
3.0
μs
IB21
PUT
INPUT
Fall time
tf
IB1 = 0.1 A, IB2 = −0.2 A
DUTY CYCLE ≤ 1%
―
―
0.3
Marking
C5548A
Part No. (or abbreviation code) Lot No. Note 1
Note 1:
A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2013-11-01
Collector current IC (A)
IC – VCE
2.0
200
150
1.6
100
80
60 1.2
40
0.8
.