2SC5551

Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Features · High fT : (fT=3.5GHz typ). · Large current : (IC=300mA). · Large allowable collector dissipation (1.3W max). Package Dimensions unit:mm 2038A [2SC5551] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (250mm2× 0.8mm) Conditions 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Ratings 40 30 2 300 600 1.3 150 –55 to +150 Unit V V V mA mA W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 VCB=20V, IE=0 VEB=1V, IC=0 VCE=5V, IC=50mA VCE=5V, IC=300mA 90 20 Conditions Ratings min typ max 1.0 5.0 270 Unit µA µA Continued on next page. * : The 2SC5551 is classified by 50mA hFE as follows : Marking Rank hFE E 90 to 180 EB F 135 to 270 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expec...