2SC5564

Ordering number:ENN6305 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2011/2SC5564 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2038A [2SA2011/2SC5564] 4.5 1.6 1.5 Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissipation. 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications ( ) : 2SA2011 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (250mm2×0.8mm) Tc=25˚C 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Conditions Ratings (–)15 (–12)15 (–)5 (–)6 (–)9 (–)600 1.3 3.5 150 –55 to +150 Unit V V V A A mA W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=(–)12V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)500mA VCE=(–)2V, IC=(–)500mA VCB=(–)10V, f=1MHz 200 (350) 380 (41)23 Conditions Ratings min typ max (–)0.1 (–)0.1 560 MHz MHz pF Unit µA µA Continued on next page. Mark...