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2SC5566 Dataheets PDF



Part Number 2SC5566
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN TRANSISTOR
Datasheet 2SC5566 Datasheet2SC5566 Datasheet (PDF)

Ordering number:ENN6307A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2013/2SC5566 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2038A [2SA2013/2SC5566] 4.5 1.6 1.5 Features · Adoption of FBET and MBIT processes. · High current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package facilitates miniaturization in end products. · High allowable power dissipation. .

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Ordering number:ENN6307A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2013/2SC5566 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2038A [2SA2013/2SC5566] 4.5 1.6 1.5 Features · Adoption of FBET and MBIT processes. · High current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package facilitates miniaturization in end products. · High allowable power dissipation. 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications ( ) : 2SA2013 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (250mm2×0.8mm) Tc=25˚C 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Conditions Ratings (–50)80 (–)50 (–)6 (–)4 (–)7 (–)600 1.3 3.5 150 –55 to +150 Unit V V V A A mA W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)500mA VCE=(–)10V, IC=(–)500mA VCB=(–)10V, f=1MHz 200 (360) 400 (24)15 Conditions Ratings min typ max (–)1 (–)1 560 MHz MHz pF Unit µA µA Continued on next page. Marking : 2SA2013 : AT 2SC5566 : FC Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52501TS KT TA-3260 No.6307–1/5 2SA2013/2SC5566 Continued on preceding page. Parameter Symbol Conditions IC=(–)1A, IB=(–)50mA Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)2A, IB=(–)100mA Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time VBE(sat) IC=(–)2A, IB=(–)100mA (–50) 80 (–)50 (–)6 (30)35 (230) 300 (15)20 Ratings min typ (–105) 85 (–200) 150 (–)0.89 max (–180) 130 (–340) 225 (–)1.2 Unit mV mV mV mV V V V V V ns ns .


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