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2SC5570

Toshiba Semiconductor

NPN TRANSISTOR

2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5570 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTI...


Toshiba Semiconductor

2SC5570

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2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5570 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS Unit: mm l High Voltage l Low Saturation Voltage l High Speed : VCBO = 1700 V : VCE (sat) = 3 V (Max.) : tf (2) = 0.1 µs (Typ.) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1700 800 5 28 56 14 220 150 −55~150 UNIT V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-21F2A Weight: 9.75 g (typ.) ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC Collector Cut−off Current Emitter Cut−off Current Emitter−Base Breakdown Voltage DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Storage Time Switching Time Fall Time Storage Time Fall Time SYMBOL TEST CONDITION ICBO IEBO V (BR) CEO hFE (1) hFE (2) hFE (3) VCE (sat) VBE (sat) fT Cob tstg (1) tf (1) tstg (2) tf (2) VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 8 A VCE = 5 V, IC = 22 A IC = 22 A, IB = 5.5 A IC = 22 A, IB = 5.5 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 10 A, IB1 (end) = 1.4 A fH = 64 kHz ICP = 8 A, IB1 (end) = 1.2 A fH = 130 kHz MIN ― ― 8...




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