2SC5593

2SC5593 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-797 (Z) 1st. Edition Nov. 2000 Features High gain bandwidth product fT = 23 GHz typ. High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz Outline CMPAK-4 2 3 1 4 1. Emitter 2. Collector 3. Emitter 4. Base Note: Marking is “XH-”. 2SC5593 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 12 4.5 1 12 50 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO I CBO I CEO I EBO hFE Cob fT PG NF Min 12 — — — 60 — 20 14 — Typ — — — — 100 0.16 23 18 1.8 Max — 1 1 12 140 0.4 — — 2.3 Unit V µA µA µA V pF GHz dB dB Test Conditions I C = 10 µA , IE = 0 VCB = 10 V , IE = 0 VCE = 4 V , RBE = ∞ VEB = 1 V , IC = 0 VCE = 2 V , IC = 10 mA VCB = 2 V , IE = 0 f = 1 MHz VCE = 2 V , IC = 10 mA f = 2 GHz VCE = 2 V , IC = 10 mA f = 1.8 GHz VCE = 2 V , IC = 3 mA f = 1.8 GHz 2 2SC5593 Main Characteristics Collector Power Dissipation Curve Pc (mW) 200 hFE 200 DC Current Transfet Ratio vs. Collector Current Collector Power Dissipatio ...