Transistors
2SC5609
Silicon NPN epitaxial planar type
For general amplification Complementary to 2SA2021
0.33+–00..002...
Transistors
2SC5609
Silicon
NPN epitaxial planar type
For general amplification Complementary to 2SA2021
0.33+–00..0025
Unit: mm
0.10+–00..0025
3
0.15 min.
0.80±0.05 1.20±0.05
■ Features
High forward current transfer ratio hFE
5˚
SSS-Mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
0.23+–00..0025
12
(0.40) (0.40) 0.80±0.05 1.20±0.05
5˚
0.15 min.
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
60
V
c type Collector-emitter voltage (Base open) VCEO
50
0 to 0.01 0.52±0.03
V
n d ge. ed Emitter-base voltage (Collector open) VEBO
7
V
le sta ntinu Collector current
IC
100
mA
a e cyc isco Peak collector current
ICP
200
mA
life d, d Collector power dissipation
PC
100
mW
n u duct type Junction temperature
Tj
125
°C
te tin Pro ued Storage temperature
Tstg −55 to +125 °C
1: Base 2: Emitter 3: Collector SSSMini3-F1 Package
Marking Symbol: 3F
0.15 max.
in n es follopwlianngefdoudriscontin ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min Typ Max Unit
c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
60
V
tinu nan Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50
V
M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
7
V
e/D e, m Collector-base cutoff current (Emitter open) ICBO VCB = 20 ...