2SC5628

2SC5628 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-979A (Z) 2nd. Edition April 2001 Features Super compact package; (1.4 × 0.8 × 0.59mm) High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “XZ-”. 2SC5628 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 8 1.5 50 80 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO I CBO I CEO I EBO hFE Cob fT PG NF Min 15 — — — 50 — 6 11 — Typ — — — — 100 0.55 9 14 1.1 Max — 1 1 10 160 0.85 — — 2.0 Unit V µA mA µA V pF GHz dB dB Test Conditions I C = 10µA , IE = 0 VCB = 12V , IE = 0 VCE = 8V , RBE = ∞ VEB = 1.5V , IC = 0 VCE = 1V , IC = 5mA VCB = 1V , IE = 0 f = 1MHz VCE = 1V , IC = 5mA VCE = 1V, IC = 5mA f = 900MHz VCE = 1V, IC = 5mA f = 900MHz 2 2SC5628 Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 200 DC Current Transfer Ratio h FE 200 DC Current Transfer Ratio vs. Collector Current 150 V...