2SC5654

Transistors 2SC5654 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm (0.425) 0.3+–00..01 0.15+–00..0150 ■ Features 3 Low collector-emitter saturation voltage VCE(sat) S-Mini type package, allowing downsizing of the equipment and 1.25±0.10 2.1±0.1 5˚ automatic insertion through the tape packing 1 2 (0.65) (0.65) 1.3±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.0±0.2 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 20 0.2±0.1 V c e. d ty Collector-emitter voltage (Base open) VCEO 20 V n d stag tinue Emitter-base voltage (Collector open) VEBO 5 0 to 0.1 0.9±0.1 0.9–+00..12 V a e cle con Collector current IC 1 A lifecy , dis Peak collector current ICP 3 A n u duct typed Collector power dissipation PC 150 mW te tin Pro ed Junction temperature Tj 150 °C ur tinu Storage temperature Tstg −55 to +150 °C 10˚ 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: 2S in n es follopwlianngefdodiscon ■ Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min Typ Max Unit c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 20 V tinu nan Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 20 V M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V e/D e, m Forward current transfer ratio hFE VCE = 2 V, IC = 100 mA 160 560  D anc typ Collector-emitter saturation volta...