DatasheetsPDF.com

2SC5700

Hitachi Semiconductor

NPN TRANSISTOR

2SC5700 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1435 (Z) Rev.0 Jul. 2001 Features • High power gain l...



2SC5700

Hitachi Semiconductor


Octopart Stock #: O-239890

Findchips Stock #: 239890-F

Web ViewView 2SC5700 Datasheet

File DownloadDownload 2SC5700 PDF File







Description
2SC5700 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1435 (Z) Rev.0 Jul. 2001 Features High power gain low noise figure at low power operation: |S21| = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) 2 Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “WB–“. 2SC5700 Absolute Maximum Ratings (Ta = 25 °C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Value 15 4 1.5 50 80 150 −55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Forward transmission coefficient Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT |S21| NF 2 Min 15    100  10 13  Typ     130 0.4 12 16 1.0 Max  0.1 1 200 170 0.7   1.7 Unit V µA µA nA  pF GHz dB dB Test conditions IC = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 4 V, RBE = Infinite VEB = 0.8 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 1V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz, ΓS = ΓL = 50 ohm Rev.0, Jun. 2001, page 2 of 10 2SC5700 Collector Power Dissipation Curve Typical Output Characteristics 50 0µ A 450 µA Pc (mW) 100 80 50 400 µA 350 µ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)