2SC5700
Silicon NPN Epitaxial VHF/UHF wide band amplifier
ADE-208-1435 (Z) Rev.0 Jul. 2001 Features
• High power gain l...
2SC5700
Silicon
NPN Epitaxial VHF/UHF wide band amplifier
ADE-208-1435 (Z) Rev.0 Jul. 2001 Features
High power gain low noise figure at low power operation: |S21| = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)
2
Outline
MFPAK
3
1 2
1. Emitter 2. Base 3. Collector
Note: Marking is “WB–“.
2SC5700
Absolute Maximum Ratings
(Ta = 25 °C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Value 15 4 1.5 50 80 150 −55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics
(Ta = 25°C)
Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Forward transmission coefficient Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT |S21| NF
2
Min 15 100 10 13
Typ 130 0.4 12 16 1.0
Max 0.1 1 200 170 0.7 1.7
Unit V µA µA nA pF GHz dB dB
Test conditions IC = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 4 V, RBE = Infinite VEB = 0.8 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 1V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz, ΓS = ΓL = 50 ohm
Rev.0, Jun. 2001, page 2 of 10
2SC5700
Collector Power Dissipation Curve Typical Output Characteristics
50 0µ A
450 µA
Pc (mW)
100 80
50
400 µA
350 µ...