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2SC5710 Dataheets PDF



Part Number 2SC5710
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN TRANSISTOR
Datasheet 2SC5710 Datasheet2SC5710 Datasheet (PDF)

Ordering number : ENN6915 2SA2044 / 2SC5710 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2044 / 2SC5710 DC / DC Converter Applications Applications • Package Dimensions unit : mm 2045B [2SA2044 / 2SC5710] 6.5 5.0 4 Relay drivers, lamp drivers, motor drivers, strobes. Features • • • • • Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.85 0.7 1.5 2.3 0.5 5.5 7.0 0..

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Ordering number : ENN6915 2SA2044 / 2SC5710 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2044 / 2SC5710 DC / DC Converter Applications Applications • Package Dimensions unit : mm 2045B [2SA2044 / 2SC5710] 6.5 5.0 4 Relay drivers, lamp drivers, motor drivers, strobes. Features • • • • • Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.85 0.7 1.5 2.3 0.5 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 unit : mm 2044B [2SA2044 / 2SC5710] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 0.5 1 0.6 0.8 2 3 2.5 1.2 1.2 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52101 TS IM TA-3249 No.6915-1/5 2SA2044 / 2SC5710 Specifications ( ) : 2SA2044 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings (-30)40 (--)30 (--)6 (--)9 (--)12 (--)1.2 1 15 150 --55 to +150 Unit V V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)30V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(-)500mA VCE=(--)10V, IC=(--)500mA VCB=(--)10V, f=1MHz IC=(--)4A, IB=(-)200mA IC=(--)2.5A, IB=(-)50mA IC=(--)2.5A, IB=(-)50mA IC=(--)10µA, IE=0 IC=(--)1mA, RBE=∞ IE=(-)10µA, IC=0 See specified test circuit. See specified test circuit. See specified test circuit. (--30)40 (--)30 (--)6 30 (190)320 15 200 (290)320 (52)40 (--200)180 (--340)270 (--170)130 (--290)195 (-)0.85 (--)1.2 Ratings min typ max (--)0.1 (--)0.1 560 MHz pF mV mV V V V V ns ns ns Unit µA µA Swicthing Time Test Circuit PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω RB + 100µF VBE= --5V + 470µF VCC=12V RL IC=20IB1= --20IB2=2.5A For PNP, the polarity is reversed. No.6915-2/5 2SA2044 / 2SC5710 --8 IC -- VCE 2SA2044 --90mA --80mA mA 00 --1 --70mA --60mA --50mA 8 IC -- VCE 90mA --7 7 70m A 60m A 50m A 40mA 30mA 80mA Collector Current, IC -- A Collector Current, IC -- A --5 --4 --3 --2 --40mA --30mA --20mA --10mA 5 4 3 2 1 100m --6 6 A 20mA 10mA --1 0 0 --0.4 --0.8 --1.2 --1.6 IB=0 --2.0 IT00188 0 0 2SC5710 0.4 0.8 1.2 1.6 IB=0 2.0 IT00189 Collector-to-Emitter Voltage, VCE -- V --8 --7 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 8 7 IC -- VBE 2SA2044 VCE= --2V 2SC5710 VCE=2V Collector Current, IC -- A --6 --5 --4 Collector Current, IC -- A 6 5 4 3 25°C 25°C --3 --2 --1 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 5°C Ta=7 5 °C 2 1 0 0 0.2 0.4 --25° C 0.6 0.8 --25°C 1.0 Ta= 7 1.2 1.4 IT00191 Base-to-Emitter Voltage, VBE -- V 1000 7 5 IT00190 1000 hFE -- IC Base-to-Emitter Voltage, VBE -- V hFE -- IC DC Current Gain, hFE DC Current Gain, hFE 3 2 Ta=75°C 25°C --25°C 2SA2044 VCE= --2V 7 5 3 2 Ta=75°C --25°C 2SC5710 VCE=2V 25°C 100 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A --1000 7 5 3 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT00192 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 VCE(sat) -- IC Collector Current, IC -- A 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT00193 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 Ta= 5°C Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2SA2044 IC / IB=20 2SC5710 IC / IB=20 ° --25 C 25°C C 75°.


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