2SC5774

Ordering number : ENN6987A 2SA2062 / 2SC5774 2SA2062 / 2SC5774 Features PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 140V / 10A, AF70W Output Applications Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process. Specifications Note*( ) : 2SA2062 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings (-)160 (-)140 (-)6 (-)10 (-)20 2.5 110 150 -55 to +150 Unit V V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Base-to-Emitter Voltage Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE(1) hFE(2) fT Cob VBE VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)160V, IE=0 VEB=(--)4V, IC=0 VCE=(--)5V, IC=(--)1A VCE=(--)5V, IC=(--)5A VCE=(--)5V, IC=(--)1A VCB=(--)10V, f=1MHz VCE=(--)5V, IC=(--)5A IC=(--)5A, IB=(--)0.5A IC=(--)5mA, IE=0 IC=(--)50mA, RBE=∞ IE=(--)5mA, IC=0 See specified test circuit. See specified test circuit. See specified test circuit. (--)160 (...