Power Transistors
2SC5779
Silicon NPN epitaxial planar type
Unit: mm
■ Features
• High-speed switching (tstg: storage ...
Power
Transistors
2SC5779
Silicon
NPN epitaxial planar type
Unit: mm
■ Features
High-speed switching (tstg: storage time/tf: fall time is short) Low collector-emitter saturation voltage VCE(sat) Superior forward current transfer ratio hFE linearity TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed
13.7±0.2 4.2±0.2 Solder Dip
15.0±0.5
Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
φ 3.2±0.1
1.4±0.2 1.6±0.2 0.8±0.1
2.6±0.1
0.55±0.15
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 50 50 6 10 20 25 2.0 150 −55 to +150 °C °C Unit V V V A A W
2.54±0.30 5.08±0.50 1 2 3
1: Base 2: Collector 3: Emitter TO-220D-A1 Package
Internal Connection
C B E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO ICEO IEBO hFE1 hFE2 Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf Conditions IC = ...
