Document
Transistors
2SC5845
Silicon NPN epitaxial planar type
For general amplification
Unit: mm
■ Features
• High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and au-
0.40+–00..0150 3
0.16+–00..0160
0.4±0.2
1.50–+00..0255 2.8–+00..32
tomatic insertion through the tape packing and the magazine pack-
ing
1
2
5˚
(0.65)
(0.95) (0.95)
/ ■ Absolute Maximum Ratings Ta = 25°C
1.9±0.1 2.90+–00..0250
Parameter
Symbol Rating
Unit
e e) Collector-base voltage (Emitter open) c e. d typ Collector-emitter voltage (Base open) n d stag tinue Emitter-base voltage (Collector open) a e cle con Collector current
lifecy , dis Peak collector current
n u ct ped Collector power dissipation te tin Produ ed ty Junction temperature
ur tinu Storage temperature
VCBO
60
V
VCEO
50
V
VEBO
7
V
IC
100
mA
ICP
200
mA
PC
200
mW
Tj
150
°C
Tstg −55 to +150 °C
0 to 0.1
1.1–+00..12 1.1–+00..13
10˚
Marking Symbol: 7M
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
in n es follopwlianngefdodiscon ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
c ed in ce ty Collector-base voltage (Emitter open)
tinu nan Collector-emitter voltage (Base open)
M is iscon ainte Emitter-base voltage (Collector open)
/D , m Collector-base cutoff current (Emitter open)
D ance type Collector-emitter cutoff current (Base open)
inten nce Forward current transfer ratio Ma tena Collector-emitter saturation voltage ain Collector output capacitance ed m (Common base, input open circuited)
VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) Cob
IC = 10 µΑ, IE = 0 IC = 2 mA, IB = 0 IE = 10 µΑ, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 10 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCB = 10 V, IE = 0, f = 1 MHz
(plan Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
Min Typ Max Unit
60
V
50
V
7
V
0.1
µA
100 µA
160
460
0.1 0.3
V
2.2
pF
100
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2003
SJC00297AED
1
2SC5845
Collector power dissipation PC (mW)
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
PC Ta
240 200 160 120 80
IC VCE
50 Ta = 25°C
IB = 160 µA
40
140 µA
120 µA
30 100 µA
80 µA 20
60 µA
IC IB
140 VCE = 10V Ta = 25°C
120
100
80
60
40
40
0
0
40
80
120
160
/ Ambient temperature Ta (°C)
10
40 µA
20 µA 0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
20
0 0 0.2 0.4 0.6 0.8 1.0 Base current IB (mA)
e pe) IC VBE c ty 120 n d tage. ued VCE=10V
le s ntin 100
Collector-emitter saturation voltage VCE(sat) (V)
a elifecyc , disco 80
n u t ed Ta=75°C
–25°C
Base current IB (mA)
roduc d typ 60
te tin P ue 25°C
four ontin 40
in n llowing ddisc 20
des fo , plane 0
a o clu pe 0 0.2 0.4 0.6 0.8 1.0 1.2 c d in e ty Base-emitter voltage VBE (V)
M is/Discontimnuaeintenanc hFE IC
e e, 350
D anc typ Ta = 75°C
VCE = 10V
Cob
(pF)
ten ce 300 in an 25°C
Ma ten 250 ain –25°C
d m 200
(plane 150
IB VBE
3.5 VCE = 10V Ta = 25°C
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.2
0.4
0.6
0.8
Base-emitter voltage VBE (V)
Cob VCB
10 f = 1 MHz Ta = 25°C
VCE(sat) IC
1 IC / IB = 10
0.1 25°C
Ta = 75°C –25°C
0.01 1
10
100
Collector current IC (mA)
Collector output capacitance (Common base, input open circuited)
100
50
0
1
10
100
1 000
Collector current IC (mA)
1
0
8
16 24 32 40
Collector-base voltage VCB (V)
Forward current transfer ratio hFE
2
SJC00297AED
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