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2SC5845 Dataheets PDF



Part Number 2SC5845
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description NPN Transistor
Datasheet 2SC5845 Datasheet2SC5845 Datasheet (PDF)

Transistors 2SC5845 Silicon NPN epitaxial planar type For general amplification Unit: mm ■ Features • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and au- 0.40+–00..0150 3 0.16+–00..0160 0.4±0.2 1.50–+00..0255 2.8–+00..32 tomatic insertion through the tape packing and the magazine pack- ing 1 2 5˚ (0.65) (0.95) (0.95) / ■ Absolute Maximum Ratings Ta = 25°C 1.9±0.1 2.90+–00..0250 Parameter Symbol Rating Unit e e) Collector-b.

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Transistors 2SC5845 Silicon NPN epitaxial planar type For general amplification Unit: mm ■ Features • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and au- 0.40+–00..0150 3 0.16+–00..0160 0.4±0.2 1.50–+00..0255 2.8–+00..32 tomatic insertion through the tape packing and the magazine pack- ing 1 2 5˚ (0.65) (0.95) (0.95) / ■ Absolute Maximum Ratings Ta = 25°C 1.9±0.1 2.90+–00..0250 Parameter Symbol Rating Unit e e) Collector-base voltage (Emitter open) c e. d typ Collector-emitter voltage (Base open) n d stag tinue Emitter-base voltage (Collector open) a e cle con Collector current lifecy , dis Peak collector current n u ct ped Collector power dissipation te tin Produ ed ty Junction temperature ur tinu Storage temperature VCBO 60 V VCEO 50 V VEBO 7 V IC 100 mA ICP 200 mA PC 200 mW Tj 150 °C Tstg −55 to +150 °C 0 to 0.1 1.1–+00..12 1.1–+00..13 10˚ Marking Symbol: 7M 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package in n es follopwlianngefdodiscon ■ Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions c ed in ce ty Collector-base voltage (Emitter open) tinu nan Collector-emitter voltage (Base open) M is iscon ainte Emitter-base voltage (Collector open) /D , m Collector-base cutoff current (Emitter open) D ance type Collector-emitter cutoff current (Base open) inten nce Forward current transfer ratio Ma tena Collector-emitter saturation voltage ain Collector output capacitance ed m (Common base, input open circuited) VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) Cob IC = 10 µΑ, IE = 0 IC = 2 mA, IB = 0 IE = 10 µΑ, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 10 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCB = 10 V, IE = 0, f = 1 MHz (plan Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz Min Typ Max Unit 60 V 50 V 7 V 0.1 µA 100 µA 160 460  0.1 0.3 V 2.2 pF 100 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: August 2003 SJC00297AED 1 2SC5845 Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) PC  Ta 240 200 160 120 80 IC  VCE 50 Ta = 25°C IB = 160 µA 40 140 µA 120 µA 30 100 µA 80 µA 20 60 µA IC  IB 140 VCE = 10V Ta = 25°C 120 100 80 60 40 40 0 0 40 80 120 160 / Ambient temperature Ta (°C) 10 40 µA 20 µA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 20 0 0 0.2 0.4 0.6 0.8 1.0 Base current IB (mA) e pe) IC  VBE c ty 120 n d tage. ued VCE=10V le s ntin 100 Collector-emitter saturation voltage VCE(sat) (V) a elifecyc , disco 80 n u t ed Ta=75°C –25°C Base current IB (mA) roduc d typ 60 te tin P ue 25°C four ontin 40 in n llowing ddisc 20 des fo , plane 0 a o clu pe 0 0.2 0.4 0.6 0.8 1.0 1.2 c d in e ty Base-emitter voltage VBE (V) M is/Discontimnuaeintenanc hFE  IC e e, 350 D anc typ Ta = 75°C VCE = 10V Cob (pF) ten ce 300 in an 25°C Ma ten 250 ain –25°C d m 200 (plane 150 IB  VBE 3.5 VCE = 10V Ta = 25°C 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 Base-emitter voltage VBE (V) Cob  VCB 10 f = 1 MHz Ta = 25°C VCE(sat)  IC 1 IC / IB = 10 0.1 25°C Ta = 75°C –25°C 0.01 1 10 100 Collector current IC (mA) Collector output capacitance (Common base, input open circuited) 100 50 0 1 10 100 1 000 Collector current IC (mA) 1 0 8 16 24 32 40 Collector-base voltage VCB (V) Forward current transfer ratio hFE 2 SJC00297AED Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices.


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