2SC5884

Power Transistors 2SC5884 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit: mm 3.0±0.2 ■ Features 9.9±0.3 4.6±0.2 2.9±0.2 15.0±0.3 8.0±0.2 1.0±0.1 High breakdown voltage: VCBO ≥ 1 500 V Wide safe operation area φ3.2±0.1 Built-in dumper diode ■ Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 13.7-+00..25 2.0±0.2 4.1±0.2 Solder Dip 0.76±0.06 1.45±0.15 1.2±0.15 0.75±0.1 1.25±0.1 2.6±0.1 0.7±0.1 e Collector-base voltage (Emitter open) VCBO 1 500 V pe) Collector-emitter voltage (E-B short) VCES 1 500 V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO 5 V sta tinu Base current IB 2 A a e cycle iscon Collector current IC 4 A life d, d Peak collector current * ICP 6 A n u duct type Collector power dissipation PC 30 W te tin Pro ed Ta=25°C 2 four ntinu Junction temperature Tj 150 °C ing isco Storage temperature Tstg −55 to +150 °C ain oncludes fpoell,opwlaned d Note) *: Non-repetitive peak collector current 2.54±0.2 5.08±0.4 7° 1 2 3 1: Base 2: Collector 3: Emitter TO-220H Package Marking Symbol: C5884 Internal Connection C B E M isccontinueindteinnance ty ■ Electrical Characteristics TC = 25°C ± 3°C /Dis ma Parameter Symbol Conditions D ance type, Emitter-base voltage (Collector open) ten ce Forward voltage Main tenan Collector-base cutoff current (Emitter open) d main Forward current transfer ratio (plane Collector-emitter saturation voltage VEBO VF ICBO hFE...