2SC5931

Power Transistors 2SC5931 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit: mm I Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 High breakdown voltage: VCBO ≥ 1 700 V High speed switching: tf < 200 ns Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ I Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.7±0.1 / Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip 5.45±0.3 e Collector-base voltage (Emitter open) VCBO 1 700 V pe) Collector-emitter voltage (E-B short) VCES 1 700 V nc d ge. ed ty Collector-emitter voltage (Base open) VCEO 600 3.3±0.3 (2.0) 5.5±0.3 V sta tinu Emitter-base voltage (Collector open) VEBO 7 V a e cycle iscon Base current IB 7.5 A life d, d Collector current IC 15 A n u duct type Peak collector current * ICP 25 A te tin Pro ed Collector power dissipation PC 60 W four ntinu Ta = 25°C 3 ing isco Junction temperature Tj 150 °C in n follow ed d Storage temperature Tstg −55 to +150 °C a o ludes e, plan Note) *: Non-repetitive peak collector current 10.9±0.5 5˚ 12 3 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package Marking Symbol: C5931 Internal Connection C B E M isccontinueindteinncance typ I Electrical Characteristics TC = 25°C ± 3°C /Dis ma Parameter Symbol Conditions D ance type, Collector-base cutoff current (Emitter open) Maintentenance Emitter-base cutoff current (Collector ope...