TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC941TM
2SC941TM
High Frequency Amplifier Applications AM...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process)
2SC941TM
2SC941TM
High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications
Unit: mm
· Low noise figure: NF = 3.5dB (max) (f = 1 MHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
35 30 4 100 20 400 125 -55~125
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Reverse transfer capacitance Collector-base time constant Noise figure
ICBO
VCB = 20 V, IE = 0
IEBO
VEB = 2 V, IC = 0
hFE VCE = 12 V, IC = 2 mA
(Note)
VCE (sat) VBE (sat)
fT Cre Cc・rbb’
NF
IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCE = 10 V, IC = 2 mA VCE = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IE = -1 mA, f = 30 MHz VCE = 10 V, IE = -1 mA, f = 1 MHz, Rg = 50 W
Note: hFE classification R: 40~80, O: 70~140, Y: 120~240
Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 1.0 mA
40 ¾ 240
¾ ¾ 0.4 V ¾ ¾ 1.0 V 80 120 ¾ MHz ¾ 2.2 3.0 pF ¾ 30 50 ps ¾ 2.0 3.5 dB
1 2003-03-24
Y Parameters (typ.) (common emitter VCE = 6 V,...