2SC982TM

2SC982TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) 2SC982TM Printer Drive, Core Drive and LED Drive Applications Low Frequency Amplifier Applications Unit: mm · High DC current gain: hFE (1) = 5000 (min) (IC = 10 mA) : hFE (2) = 10000 (min) (IC = 100 mA) Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristics Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note) VCBO VCEO VEBO IC ICP Base current Collector power dissipation Junction temperature Storage temperature range IB PC Tj Tstg Note: Pulse width =< 10 ms, duty cycle <= 10% Rating 40 40 10 300 500 10 400 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Symbol ICBO IEBO hFE (1) hFE (2) VCE (sat) VBE Test Condition VCB = 40 V, IE = 0 VEB = 8 V, IC = 0 VCE = 5 V, IC = 10 mA VCE = 2 V, IC = 100 mA IC = 300 mA, IB = 0.3 mA VCE = 2 V, IC = 100 mA JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Min Typ. Max Unit ¾ ¾ 5000 10000 ¾ ¾ ¾ ¾ ¾ ¾ 0.9 1.25 0.1 0.1 ¾ ¾ 1.3 1.6 mA mA V V 1 2003-03-25 2SC982TM 2 2003-03-25 2SC982TM RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail d...