Transistor
2SD0601A (2SD601A)
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB0709A (2S...
Transistor
2SD0601A (2SD601A)
Silicon
NPN epitaxial planer type
For general amplification Complementary to 2SB0709A (2SB709A)
I Features
G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 60 50 7 200 100 200 150
–55 ~ +150
Unit V V V mA mA mW ˚C ˚C
+0.2
2.9 –0.05 1.9±0.2 0.95 0.95
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1.45
1 3
2
+0.1
0.4 –0.05
+0.1
0.16 –0.06
0.1 to 0.3 0.4±0.2
+0.2
1.1 –0.1 0.8
0 to 0.1
1:Base 2:Emitter 3:Collector
JEDEC:TO–236 EIAJ:SC–59 Mini Type...
