2SD0602A

Transistors 2SD0602A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB0710A I Features Low collector to emitter saturation voltage VCE(sat) Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 2 (0.65) (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10° 1.1+0.2 –0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 60 50 5 1 500 200 150 −55 to +150 Unit V V V A mA mW °C °C 1: Base 2: Emitter 3: Collector 0 to 0.1 1.1+0.3 –0.1 JEDEC: TO-236 EIAJ: SC-59 Mini Type Package Marking Symbol: X I Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 *2 Conditions VCB = 20 V, IE = 0 IC = 10 µA, IE = 0 IC = 10 mA, IB = 0 IE = 10 µA, IC = 0 VCE = 10 V, IC = 150 mA VCE = 10 V, IC = 500 mA IC = 300 mA, IB = 30 mA VCB = 10 V, IE = −50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz Min Typ Max 0.1 Unit µA V V V 60 50 5 85 40 0.35 200 6 15 0.6 340 Collector to emitter saturation voltage *1 Transiti...