Transistor
2SD814, 2SD814A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise amp...
Transistor
2SD814, 2SD814A
Silicon
NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise amplification
Unit: mm
s Features
q q q
2.8 –0.3 0.65±0.15
+0.2
0.95
High collector to emitter voltage VCEO. Low noise voltage NV. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C)
1.5 –0.05
+0.25
0.65±0.15
0.95
2.9 –0.05
1
1.9±0.2
+0.2
3
0.4 –0.05
+0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD814 2SD814A 2SD814 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol
2
1.45
1.1 –0.1
+0.2
Ratings 150 185 150 185 5 100 50 200 150 –55 ~ +150
Unit V
emitter voltage 2SD814A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V mA mA mW ˚C ˚C
1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package
Marking symbol : P(2SD814) L(2SD814A)
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage 2SD814 2SD814A
(Ta=25˚C)
Symbol ICBO VCEO VEBO hFE* VCE(sat) fT Cob NV Conditions VCB = 100V, IE = 0 IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 5V, IC = 10mA IC = 30mA, IB = 3mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 150 2.3 150 150 185 5 90 330 1 V MHz pF mV min typ max 1 Unit µA V V
Emitter to base voltage Forward current transf...