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2SD1063 Dataheets PDF



Part Number 2SD1063
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet 2SD1063 Datasheet2SD1063 Datasheet (PDF)

Ordering number:688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications · Universal high current switching as solenoid driving, high speed inverter and converter. Features · Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max. · Wide ASO. Package Dimensions unit:mm 2022A [2SB827/2SD1063] ( ) : 2SB827 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emit.

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Ordering number:688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications · Universal high current switching as solenoid driving, high speed inverter and converter. Features · Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max. · Wide ASO. Package Dimensions unit:mm 2022A [2SB827/2SD1063] ( ) : 2SB827 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)40V, IE=0 Emitter Cutoff Current DC Current Gain IEBO hFE1 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A hFE2 VCE=(–)2V, IC=(–)5A Gain-Bandwidth Product fT VCE=(–)5V, IC=(–)1A Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)4A, IB=(–)0.4A * : The 2SB827/2SD1063 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Ratings (–)60 (–)50 (–)6 (–)7 (–)14 60 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ 70* 30 10 max (–)0.1 (–)0.1 280* (–)0.4 Unit mA mA MHz V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91098HA (KT)/4027KI/622KI No.688–1/4 Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Fall Time Storage Time Switching Time Test Circuit 2SB827/2SD1063 Symbol Conditions V(BR)CBO V(BR)CEO V(BR)EBO ton tf IC=(–)1mA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)1mA, IC=0 See specified test circuit. See specified test circuit. tstg See specified test circuit. Ratings min typ (–)60 (–)50 (–)6 0.2 (0.1) 0.3 (0.7) 0.9 max Unit V V V µs µs µs µs µs Unit (resistance : Ω, capacitance : F) No.688–2/4 2SB827/2SD1063 No.688–3/4 2SB827/2SD1063 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any and all SANYO products described or contained herein fall under strategic products (including services) controlled under the Foreign Exchange and Foreign Trade Control Law of Japan, such products must not be exported without obtaining export license from the Ministry of International Trade and Industry in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification” for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only .


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