2SD1133, 2SD1134
Silicon NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB857 a...
2SD1133, 2SD1134
Silicon
NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB857 and 2SB858
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg
1
2SD1133 70 50 5 4 8 40 150 –45 to +150
2SD1134 70 60 5 4 8 40 150 –45 to +150
Unit V V V A A W °C °C
2SD1133, 2SD1134
Electrical Characteristics (Ta = 25°C)
2SD1133 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO
1
2SD1134 Max — — — 1 320 — 1 1 — Min 70 60 5 — 60 35 — — — Typ — — — — — — — — 7 Max — — — 1 320 — 1 1 — V V MHz Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 50 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 50 V, IE = 0 VCE = 4V I C = 1 A*2 I C = 0.1 A*2 I C = 2 A, IB = 0.2 A*2 VCE = 4 V, IC = 1 A*2 VCE = 4 V, IC = 0.5 A*2
Min 70 50 5 — 60 35 — — —
Typ — — — — — — — — 7
DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product
VCE(sat) VBE fT
Notes: 1. The 2SD1133 and 2SD1134 are grouped by h FE1 as follows. 2. Pulse test. B 60 to 120 C 100 to 200 D 160...