2SD1138
Silicon NPN Triple Diffused
ADE-208-908 (Z) 1st. Edition Sep. 2000
Application
Low frequency high voltage power ...
2SD1138
Silicon
NPN Triple Diffused
ADE-208-908 (Z) 1st. Edition Sep. 2000
Application
Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861
Outline
TO-220AB
1 23
1. Base 2. Collector
(Flange) 3. Emitter
2SD1138
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation
Junction temperature Storage temperature Note: 1. Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC IC (peak) PC PC * 1 Tj Tstg
Rating
Unit
200
V
150
V
6
V
2
A
5
A
1.8
W
30
W
150
°C
–45 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to emitter breakdown V(BR)CEO 150 — voltage
Emitter to base breakdown
V(BR)EBO
6
—
voltage
Collector cutoff current
I CBO
—
—
DC current transfer ratio
hFE1*1
60
—
hFE2
60
—
Collector to emitter saturation VCE (sat) —
—
voltage
Base to emitter voltage
VBE
—
—
Collector output capacitance Cob
—
20
Note: 1. The 2SD1138 is grouped by hFE1 as follows. 2. Pulse test.
Max Unit
—
V
—
V
1
µA
320
—
3.0 V
1.0 V
—
pF
Test conditions IC = 50 mA, RBE = ∞
IE = 5 mA, IC = 0
VCB = 120 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 10 V, IC = 500 mA*2 IC = 500 mA, IB = 50 mA*2
VCB = 4 V, IC = 50 mA VCB = 100 V, IE = 0, f = 1 MHz
B 60 to 120
C
D
100 to 200 160 to 320
2
Collector power dissipation Pc (W)
Maximum Collector Dissi...