2SD1149

Transistor 2SD1149 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 s Features q q q q 0.65±0.15 1.5 –0.05 +0.25 0.65±0.15 +0.2 1.1 –0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 100 100 15 50 20 200 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : 1V s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT Conditions VCB = 60V, IE = 0 VCE = 60V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = –2mA, f = 200MHz 100 100 15 400 0.05 100 1200 0.2 V MHz min typ max 100 1 Unit nA µA V V V *1h FE1 Rank classification Rank hFE R 400 ~ 800 1VR S 600 ~ 1200 1VS Marking Symbol 0 to 0.1 s Absolute Maximum Ratings (Ta=25˚C) 0.1 to 0.3 0.4±0.2 0.8 0.16 –0.06 +0.1 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Mini type package, allowing downsizing of the equipment ...